Showing epitaxial relationship between AlN and diamond

Alternative high power RF FETs based upon CVD diamond

Authors: C. J. H. Wort, R. S. Balmer, I. Friel and R. Lang

In this paper we review the progress made on realising the electronic material systems required for two alternative, high power RF FETs device designs based upon CVD Diamond. The first (alternative) device under consideration is an environmentally stable FET utilising transfer doping to create carriers in the diamond near surface (a SURFET); the second design is based upon an AlN/diamond heterostructure and utilises polarisation enhancement to confine carriers into the near diamond surface (PEFET). The rationale behind the various designs is described and the principle challenges of realising these novel devices discussed.

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